Probing substrate influence on graphene by fitting Raman signals with Voigt profile

Vi Min Liu, Cheng Wen Huang, Bing Jie Lin, Hsing Ying Lin, Chen Han Huang, Fu Yu Shih, Wei Hua Wang, Chih Yi Liu, Hsiang Chen Chui

研究成果: Conference contribution

摘要

We provide a new approach to identify the substrate influence and doping effect on graphene surface. In this work, the Raman bandwidths of G bands were fitted into the Voigt profile. The bandwidths of Lorentzian parts were kept as constant whether it is the suspended and supported graphene. For the Gaussian part, the suspended graphene exhibit a much greater Gaussian bandwidths of than supported graphene. It reveals the doping effect on supported graphene is stronger than that of suspended graphene. We also analyze the peak-positions of G bands, and I2D/IG ratios. For the suspended graphene, the peak positions of G band are downshifted respect to supported graphene, and the I2D/IG ratios of suspended graphene are larger than those of supported graphene.

原文English
主出版物標題Technical Digest of the 18th Microoptics Conference, MOC 2013
出版狀態Published - 2013
事件2013 18th Microoptics Conference, MOC 2013 - Tokyo, Japan
持續時間: 2013 10月 272013 10月 30

出版系列

名字Technical Digest of the 18th Microoptics Conference, MOC 2013

Other

Other2013 18th Microoptics Conference, MOC 2013
國家/地區Japan
城市Tokyo
期間13-10-2713-10-30

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料

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