Processing of highly oriented (Hg1-xRex)Ba2Ca2Cu3O8+δ tape with x∼0.1

R. L. Meng; B. Hickey; Y. Q. Wang; Y. Y. Sun; L. Gao; Y. Y. Xue; C. W. Chu

doi:10.1063/1.115816

Processing of highly oriented (Hg1-xRex)Ba2Ca2Cu3O8+δ tape with x∼0.1

R. L. Meng, B. Hickey, Y. Q. Wang, Y. Y. Sun, L. Gao, Y. Y. Xue, C. W. Chu

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摘要

Highly oriented HgBa2Ca2Cu3O8+δ on Ni tapes with a buffer layer of Cr/Ag have been successfully prepared with a transition temperature of 130 K and a transport critical-current density of 2.5×104 A/cm2 at 77 K in their self-field.

原文	English
頁（從 - 到）	3177-3179
頁數	3
期刊	Applied Physics Letters
卷	68
發行號	22
DOIs	https://doi.org/10.1063/1.115816
出版狀態	Published - 1996

All Science Journal Classification (ASJC) codes

物理與天文學（雜項）

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10.1063/1.115816

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abstract = "Highly oriented HgBa2Ca2Cu3O8+δ on Ni tapes with a buffer layer of Cr/Ag have been successfully prepared with a transition temperature of 130 K and a transport critical-current density of 2.5×104 A/cm2 at 77 K in their self-field.",

author = "Meng, {R. L.} and B. Hickey and Wang, {Y. Q.} and Sun, {Y. Y.} and L. Gao and Xue, {Y. Y.} and Chu, {C. W.}",

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AU - Hickey, B.

AU - Wang, Y. Q.

AU - Sun, Y. Y.

AU - Gao, L.

AU - Xue, Y. Y.

AU - Chu, C. W.

PY - 1996

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AB - Highly oriented HgBa2Ca2Cu3O8+δ on Ni tapes with a buffer layer of Cr/Ag have been successfully prepared with a transition temperature of 130 K and a transport critical-current density of 2.5×104 A/cm2 at 77 K in their self-field.

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Processing of highly oriented (Hg1-xRex)Ba2Ca2Cu3O8+δ tape with x∼0.1

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