TY - GEN
T1 - Programming efficiency of stacked-gate flash memories with high-κ dielectrics
AU - Chen, Y. Y.
AU - Chien, C. H.
AU - Kin, K. T.
AU - Lou, J. C.
PY - 2006
Y1 - 2006
N2 - The programming efficiency of high-permittivity (κ) inter-poly dielectrics (IPDs) and tunnel dielectrics (TDs) on the stacked-gate flash memory performance is evaluated. By 2D MEDICI simulation, stacked-gate flash memories with high-κ IPDs clearly exhibited significant improvement in operation speed over those with conventional oxide/nitride/oxide IPD programmed with either channel Fowler-Nordheim (CFN) or channel hot electron (CHE) injection. Choosing HfO2 as the IPD and using CFN programming scheme, the operating voltage can be reduced by more than 48% under a typical 10μs programming time. However, the effect of high-κ TDs was quite different when compared with high-κ IPDs. High-κ TDs were only beneficial for memories programmed with CHE injection instead of CFN tunneling. The operating voltage can be reduced by more than 27% under 10μs programming time by choosing HfO2 as both the IPD and TD with CHE programming scheme. Due to the contrary improvement in programming schemes, high-κ IPDs and TDs were suitable for next-generation NAND-and NOR-type stacked-gate flash memories, respectively.
AB - The programming efficiency of high-permittivity (κ) inter-poly dielectrics (IPDs) and tunnel dielectrics (TDs) on the stacked-gate flash memory performance is evaluated. By 2D MEDICI simulation, stacked-gate flash memories with high-κ IPDs clearly exhibited significant improvement in operation speed over those with conventional oxide/nitride/oxide IPD programmed with either channel Fowler-Nordheim (CFN) or channel hot electron (CHE) injection. Choosing HfO2 as the IPD and using CFN programming scheme, the operating voltage can be reduced by more than 48% under a typical 10μs programming time. However, the effect of high-κ TDs was quite different when compared with high-κ IPDs. High-κ TDs were only beneficial for memories programmed with CHE injection instead of CFN tunneling. The operating voltage can be reduced by more than 27% under 10μs programming time by choosing HfO2 as both the IPD and TD with CHE programming scheme. Due to the contrary improvement in programming schemes, high-κ IPDs and TDs were suitable for next-generation NAND-and NOR-type stacked-gate flash memories, respectively.
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U2 - 10.1109/NANOEL.2006.1609734
DO - 10.1109/NANOEL.2006.1609734
M3 - Conference contribution
AN - SCOPUS:33748499689
SN - 0780393589
SN - 9780780393585
T3 - NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings
SP - 302
EP - 305
BT - NanoSingapore 2006
T2 - 2006 IEEE Conference on Emerging Technologies - Nanoelectronics
Y2 - 10 January 2006 through 13 January 2006
ER -