Progress in MBE grown type-II superlattice photodiodes

Cory J. Hill, Jian V. Li, Jason M. Mumolo, Sarath D. Gunapala

研究成果: Conference contribution

3 引文 斯高帕斯(Scopus)

摘要

We report on the status of GaSb/InAs type-II superlattice diodes grown and fabricated at the Jet Propulsion Laboratory designed for infrared absorption in the 8-12μm range. Recent devices have produced detectivities as high as 8×1010 Jones with a differential resistance-area product greater than 6 Ohmcm2 at 80K with a long wavelength cutoff of approximately 12μm. The measured quantum efficiency of these front-side illuminated devices is close to 30% in the 10-11 μn range without antireflection coatings.

原文English
主出版物標題Infrared Technology and Applications XXXII
DOIs
出版狀態Published - 2006
事件Infrared Technology and Applications XXXII - Kissimmee, FL, United States
持續時間: 2006 四月 172006 四月 21

出版系列

名字Proceedings of SPIE - The International Society for Optical Engineering
6206 I
ISSN(列印)0277-786X

Other

OtherInfrared Technology and Applications XXXII
國家/地區United States
城市Kissimmee, FL
期間06-04-1706-04-21

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電腦科學應用
  • 應用數學
  • 電氣與電子工程

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