Properties of GaAs Oxides Prepared by Liquid Phase Chemical-Enhanced Technique

Hwei Heng Wang, Dei Wei Chou, Yeong Her Wang, Mau Phon Houng

研究成果: Article同行評審

15 引文 斯高帕斯(Scopus)


The properties of GaAs oxides prepared by liquid phase chemical-enhanced oxidation (LPCEO) technique are investigated. The refractive indices of the oxide films appear to increase with oxidation time, and can be well controlled by the oxidation procedures. It has been found that the accumulation of As compounds within the oxides is the origin for the phenomena. Based on the current-voltage (I-V) characteristics of the metal-oxide-semiconductor (MOS) structures, the leakage current density of the oxide has been demonstrated to be low (∼2 × 10-8 A/cm2), and a high dielectric breakdown strength of ∼8MV/cm is achieved. Finally, the complete chemical compositions from the oxide surface to the oxide-substrate interface has been determined by X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS) depth profiles.

頁(從 - 到)239-242
期刊Physica Scripta T
出版狀態Published - 1999 12月 1

All Science Journal Classification (ASJC) codes

  • 原子與分子物理與光學
  • 數學物理學
  • 凝聚態物理學


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