Properties of reactively radio frequency-magnetron sputtered (Zr,Sn)TiO4 dielectric films

Cheng Liang Huang, Cheng Hsing Hsu

研究成果: Article同行評審

19 引文 斯高帕斯(Scopus)

摘要

The properties of the ZnO doped Zr0.8Sn0.2TiO 4 thin films on n-type silicon substrates were studied at different Ar/O2 ratios and substrate temperatures. The role played by Ar/O 2 ratio and substrate temperature on the crystal structure and dielectric properties of ZST films were also studied. Using selected area diffraction, it was found that the deposited films exhibited a polycrystalline microstructure. All the films were found to exhibit ZST (111) orientation perpendicular to the substrate surface, while the grain size and the deposition rate of the films were found to increase with the increase of both the Ar partial pressure and the substrate temperature.

原文English
頁(從 - 到)1186-1191
頁數6
期刊Journal of Applied Physics
96
發行號2
DOIs
出版狀態Published - 2004 7月 15

All Science Journal Classification (ASJC) codes

  • 一般物理與天文學

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