Properties of the GaAs pseudo heterojunction bipolar transistor

K. F. Yarn, K. L. Lew, Yeong-Her Wang, Mau-phon Houng

研究成果: Article

摘要

We demonstrate a GaAs pseudo heterojunction bipolar transistor (HBT) with theoretical model and experimental results. Comparison between experimental data and theoretical calculations with conventional BJTs are made. The frequency performances of the device and dependence of cut-off frequency on spacer layer thickness are also discussed.

原文English
頁(從 - 到)19-27
頁數9
期刊International Journal of Electronics
93
發行號1
DOIs
出版狀態Published - 2006 一月 1

    指紋

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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