Properties of ZnO-doped Zr0.8Sn0.2TiO4 thin films by rf sputtering

Cheng Liang Huang, Cheng Shing Hsu

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

Electrical properties and microstructures of ZnO-doped Zr0.8Sn0.2TiO4 thin films prepared by rf magnetron sputtering were investigated. The surface structural and morphological characteristics were investigated by x-ray diffraction, scanning electron microscopy, and atomic force microscopy. The x-ray photoelectron spectroscopy results showed a molecular orbital that affected the chemical structure.

原文English
頁(從 - 到)670-676
頁數7
期刊Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
21
發行號2
出版狀態Published - 2003 3月

All Science Journal Classification (ASJC) codes

  • 凝聚態物理學
  • 電氣與電子工程

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