Pseudo-gap in RuGa3: A microscopic point of view

A. A. Gippius, A. V. Tkachev, S. V. Zhurenko, A. V. Gunbin, E. I. Demikhov, C. N. Kuo, C. S. Lue, N. Q. Nguyen, C. W. Luo, V. N. Khrustalev, R. D. Svetogorov, M. S. Likhanov, A. V. Shevelkov

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摘要

We report a detailed study of the nature of the RuGa3 in-gap states by means of precision microscopic methods: nuclear quadrupole resonance (NQR), nuclear magnetic resonance (NMR), and pump-probe spectroscopy. We observe a pronounced splitting of 69Ga nuclear spin-lattice relaxation curves below ∼40 K and between 70 and 145 K, although the corresponding NQR lines remain narrow over the entire temperature range under study. The slow relaxing component behaves like a typical phonon-induced relaxation way, while the fast relaxing one demonstrates signatures of paramagnetic (below ∼40 K) and activation (between 70 and 145 K) mechanisms. Moreover, additional Ga’ and Ga’’ positions with anomalously low electric field gradient were revealed for the first time for IrIn3-type structure gallides, which stay almost unchanged, at least up to 77 K. The observed microscopic features are accompanied with in-gap states saturation or depleting, which is seen as the resistivity mechanism crossover at ∼180 K and electron localization below 145 K evidenced by pump-probe spectroscopy. Based on our experimental results, we associate this pseudo-gap like behavior with inhomogeneously distributed electronic density defects, which manifest at both micro- (nuclear spin and phonon dynamics) and macroscale (bulk transport properties such as resistivity).

原文English
文章編號168522
期刊Journal of Alloys and Compounds
938
DOIs
出版狀態Published - 2023 3月 25

All Science Journal Classification (ASJC) codes

  • 材料力學
  • 機械工業
  • 金屬和合金
  • 材料化學

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