Purely rotational symmetry-protected topological crystalline insulator α-Bi4Br4

Chuang Han Hsu, Xiaoting Zhou, Qiong Ma, Nuh Gedik, Arun Bansil, Vitor M. Pereira, Hsin Lin, Liang Fu, Su Yang Xu, Tay Rong Chang

研究成果: Article同行評審

47 引文 斯高帕斯(Scopus)

摘要

Rotational-symmetry-protected topological crystalline insulators (TCIs) are expected to host unique boundary modes, in that the surface normal to the rotational axis can feature surface states with 'unpinned' Dirac points, which are not constrained to lie on high symmetry points or lines, but can lie at any general k point in the Brillouin zone. Also, as a higher order bulk boundary correspondence is involved here, a three-dimensional (3D) TCI can support one-dimensional (1D) helical edge states. Using first-principles band structure calculations, we identify the van der Waals material-Bi4Br4 as a purely rotation symmetry protected TCI. We show that the surface of Bi4Br4 exhibits a pair of unpinned topological Dirac fermions which are related to the presence of a two-fold rotation axis. These unpinned Dirac fermions possess an exotic spin texture which will be highly favorable for spin transport, and a band structure that consists of van Hove singularities due to a Lifshitz transition. We also identify 1D topological hinge states along the edges of an-Bi4Br4 rod. We comment on how the predicted topological features in-Bi4Br4 could be accessed experimentally.

原文English
文章編號031004
期刊2D Materials
6
發行號3
DOIs
出版狀態Published - 2019 5月 22

All Science Journal Classification (ASJC) codes

  • 一般化學
  • 一般材料科學
  • 凝聚態物理學
  • 材料力學
  • 機械工業

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