PVD TiN metal gate MOSFETs on bulk silicon and fully depleted silicon-on-insulator (FDSOI) substrates for deep sub-quarter micron CMOS technology
B. Maiti, P. J. Tobin, C. Hobbs, R. I. Hegde, F. Huang, D. L. O'Meara, D. Jovanovic, M. Mendicino, J. Chen, D. Connelly, O. Adetutu, J. Mogab, J. Candelaria, L. B. La
研究成果: Conference article › 同行評審
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引文
斯高帕斯（Scopus）