TY - JOUR
T1 - Quadruple gate-embedded T structured GaN-based metal-oxide-semiconductor high-electron mobility transistors
AU - Lee, Ching Ting
AU - Chen, Wei Shian
AU - Lee, Hsin Ying
N1 - Funding Information:
This work was supported by the Ministry of Science and Technology, China, under Contract MOST 105-2221-E-006-199-MY3.
Funding Information:
1 Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan 2 Da-Yeh University, Changhua 515, Taiwan 3 Department of Photonics Engineering, Yuan Ze University, Taoyuan 320, Taiwan 4 Department of Photonics, National Cheng Kung University, Tainan 701, Taiwan CORRESPONDING AUTHOR: C.-T. LEE (e-mail: ctlee@ee.ncku.edu.tw) This work was supported by the Ministry of Science and Technology, China, under Contract MOST 105-2221-E-006-199-MY3.
Publisher Copyright:
© 2017 IEEE.
PY - 2017/11/1
Y1 - 2017/11/1
N2 - In this paper, high performance quadruple gate-embedded T structured GaN-based metal- oxide-semiconductor high-electron mobility transistors (MOSHEMTs) were fabricated using laser interference photolithography method and photoelectrochemical oxidation method, in which polymethylmethacrylate was used as sacrificial layer. The associated drain-source saturation current was improved to 175 mA/mm and the gate leakage current at the gate-source voltage of -80 V was improved to 0.81 μA compared with the 125 mA/mm and 7.6 μA of the conventional single gate GaN-based MOSHEMTs, respectively. Moreover, the associated maximum extrinsic transconductance of the quadruple gate-embedded T structured GaN-based MOSHEMTs was enhanced from 97.3 mS/mm to 118.4 mS/mm. Besides, the associated unit gain cutoff frequency and the associated maximum oscillation frequency were improved from 7.6 GHz to 10.8 GHz and from 11.4 GHz to 27.4 GHz, respectively. The improved performances of the quadruple gate-embedded T structure GaN-based MOSHEMTs were attributed to the function of the gate length reduction and the gate resistance decrease.
AB - In this paper, high performance quadruple gate-embedded T structured GaN-based metal- oxide-semiconductor high-electron mobility transistors (MOSHEMTs) were fabricated using laser interference photolithography method and photoelectrochemical oxidation method, in which polymethylmethacrylate was used as sacrificial layer. The associated drain-source saturation current was improved to 175 mA/mm and the gate leakage current at the gate-source voltage of -80 V was improved to 0.81 μA compared with the 125 mA/mm and 7.6 μA of the conventional single gate GaN-based MOSHEMTs, respectively. Moreover, the associated maximum extrinsic transconductance of the quadruple gate-embedded T structured GaN-based MOSHEMTs was enhanced from 97.3 mS/mm to 118.4 mS/mm. Besides, the associated unit gain cutoff frequency and the associated maximum oscillation frequency were improved from 7.6 GHz to 10.8 GHz and from 11.4 GHz to 27.4 GHz, respectively. The improved performances of the quadruple gate-embedded T structure GaN-based MOSHEMTs were attributed to the function of the gate length reduction and the gate resistance decrease.
UR - http://www.scopus.com/inward/record.url?scp=85034091050&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85034091050&partnerID=8YFLogxK
U2 - 10.1109/JEDS.2017.2769112
DO - 10.1109/JEDS.2017.2769112
M3 - Article
AN - SCOPUS:85034091050
SN - 2168-6734
VL - 6
SP - 63
EP - 67
JO - IEEE Journal of the Electron Devices Society
JF - IEEE Journal of the Electron Devices Society
IS - 1
ER -