Quadruple Gate-Recessed AlGaN/GaN Fin-Nanochannel Array Metal-Oxide-Semiconductor High-Electron Mobility Transistors

Engineering & Materials Science

• Transconductance 90%
• Oxide semiconductors 89%
• High electron mobility transistors 87%
• Electron beam lithography 58%
• Metals 48%
• Cutoff frequency 43%
• Equivalent circuits 36%
• Capacitance 32%

Chemical Compounds

• Fluorescence Maxima 100%
• Transconductance 77%
• Parasitic 62%
• Compound Mobility 57%
• Electron Beam 27%
• Resistance 15%
• Reduction 11%