Quantifying the Plasmonic Generation Rate of Non-Thermal Hot Carriers with an AlGaN/GaN High-Electron-Mobility Transistor

Chun Yu Li, Chi Ching Liu, Wei Chih Lai, Yung Chiang Lan, Yun Chorng Chang

研究成果: Article同行評審

摘要

Plasmonic generation of hot carriers in metallic nanostructures has attracted much attention due to its great potential in several applications. However, it is highly debated whether the enhancement is due to the hot carriers or the thermal effect. Here, the ability to exclude the thermal effect and detect the generation of non-thermal hot carriers by surface plasmon is demonstrated using an AlGaN/GaN high-electron-mobility transistor. This ultrasensitive platform, which demonstrates at least two orders of magnitude more sensitivity compared to the previous reports, can detect the hot carriers generated from discrete nanostructures illuminated by a continuous wave light. The quantitative measurements of hot carrier generation also open a new way to optimize the plasmonic nanoantenna design in many applications.

原文English
文章編號2100362
期刊Advanced Science
8
發行號13
DOIs
出版狀態Published - 2021 7月 7

All Science Journal Classification (ASJC) codes

  • 醫藥(雜項)
  • 化學工程 (全部)
  • 材料科學(全部)
  • 生物化學、遺傳與分子生物學(雜項)
  • 工程 (全部)
  • 物理與天文學 (全部)

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