Quantitative characterization of self-assembled coherent islands

Chuan-Pu Liu, J. Murray Gibson

研究成果: Conference article

4 引文 (Scopus)

摘要

We report on plan-view transmission electron microscopy techniques, by which the size, the actual shape and the strain of a coherent island in semiconductor heterostructures can be measured accurately. The bright-field suppressed-diffraction imaging condition where no strong diffracted beam is excited in the sample provides reliable size measurement as well as the detailed shape and aspect ratio. An exact two-beam diffraction condition is employed to produce the strain contrast of a coherent island and the corresponding fringes can be easily utilized to measure the average strain relaxation occurring during island evolution. We also propose an off-axis z contrast technique for the unambiguous determination of composition profile in an island. Finally examples of application of these techniques on the characterization of Ge coherent islands on Si(1 0 0) substrates are demonstrated.

原文English
頁(從 - 到)2-8
頁數7
期刊Thin Solid Films
424
發行號1
DOIs
出版狀態Published - 2003 一月 22
事件proceedings of the 1st Ineternational Conference on Materials - Singapore, Singapore
持續時間: 2001 七月 12001 七月 6

指紋

Diffraction
Strain relaxation
Heterojunctions
Aspect ratio
Semiconductor materials
Transmission electron microscopy
Imaging techniques
Substrates
Chemical analysis
diffraction
aspect ratio
transmission electron microscopy
profiles

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

引用此文

Liu, Chuan-Pu ; Gibson, J. Murray. / Quantitative characterization of self-assembled coherent islands. 於: Thin Solid Films. 2003 ; 卷 424, 編號 1. 頁 2-8.
@article{05615b48177244c6bc9c2677a1ca369c,
title = "Quantitative characterization of self-assembled coherent islands",
abstract = "We report on plan-view transmission electron microscopy techniques, by which the size, the actual shape and the strain of a coherent island in semiconductor heterostructures can be measured accurately. The bright-field suppressed-diffraction imaging condition where no strong diffracted beam is excited in the sample provides reliable size measurement as well as the detailed shape and aspect ratio. An exact two-beam diffraction condition is employed to produce the strain contrast of a coherent island and the corresponding fringes can be easily utilized to measure the average strain relaxation occurring during island evolution. We also propose an off-axis z contrast technique for the unambiguous determination of composition profile in an island. Finally examples of application of these techniques on the characterization of Ge coherent islands on Si(1 0 0) substrates are demonstrated.",
author = "Chuan-Pu Liu and Gibson, {J. Murray}",
year = "2003",
month = "1",
day = "22",
doi = "10.1016/S0040-6090(02)00896-9",
language = "English",
volume = "424",
pages = "2--8",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "1",

}

Quantitative characterization of self-assembled coherent islands. / Liu, Chuan-Pu; Gibson, J. Murray.

於: Thin Solid Films, 卷 424, 編號 1, 22.01.2003, p. 2-8.

研究成果: Conference article

TY - JOUR

T1 - Quantitative characterization of self-assembled coherent islands

AU - Liu, Chuan-Pu

AU - Gibson, J. Murray

PY - 2003/1/22

Y1 - 2003/1/22

N2 - We report on plan-view transmission electron microscopy techniques, by which the size, the actual shape and the strain of a coherent island in semiconductor heterostructures can be measured accurately. The bright-field suppressed-diffraction imaging condition where no strong diffracted beam is excited in the sample provides reliable size measurement as well as the detailed shape and aspect ratio. An exact two-beam diffraction condition is employed to produce the strain contrast of a coherent island and the corresponding fringes can be easily utilized to measure the average strain relaxation occurring during island evolution. We also propose an off-axis z contrast technique for the unambiguous determination of composition profile in an island. Finally examples of application of these techniques on the characterization of Ge coherent islands on Si(1 0 0) substrates are demonstrated.

AB - We report on plan-view transmission electron microscopy techniques, by which the size, the actual shape and the strain of a coherent island in semiconductor heterostructures can be measured accurately. The bright-field suppressed-diffraction imaging condition where no strong diffracted beam is excited in the sample provides reliable size measurement as well as the detailed shape and aspect ratio. An exact two-beam diffraction condition is employed to produce the strain contrast of a coherent island and the corresponding fringes can be easily utilized to measure the average strain relaxation occurring during island evolution. We also propose an off-axis z contrast technique for the unambiguous determination of composition profile in an island. Finally examples of application of these techniques on the characterization of Ge coherent islands on Si(1 0 0) substrates are demonstrated.

UR - http://www.scopus.com/inward/record.url?scp=0037460309&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037460309&partnerID=8YFLogxK

U2 - 10.1016/S0040-6090(02)00896-9

DO - 10.1016/S0040-6090(02)00896-9

M3 - Conference article

AN - SCOPUS:0037460309

VL - 424

SP - 2

EP - 8

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 1

ER -