Quantized conductance of one-dimensional strongly correlated electrons in an oxide heterostructure

H. Hou, Y. Kozuka, Jun Wei Liao, L. W. Smith, D. Kos, J. P. Griffiths, J. Falson, A. Tsukazaki, M. Kawasaki, C. J.B. Ford

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

Oxide heterostructures are versatile platforms with which to research and create novel functional nanostructures. We successfully develop one-dimensional (1D) quantum-wire devices using quantum point contacts on MgZnO/ZnO heterostructures and observe ballistic electron transport with conductance quantized in units of 2e2/h. Using dc-bias and in-plane field measurements, we find that the g factor is enhanced to around 6.8, more than three times the value in bulk ZnO. We show that the effective mass m∗ increases as the electron density decreases, resulting from the strong electron-electron interactions. In this strongly interacting 1D system we study features matching the "0.7" conductance anomalies up to the fifth subband. This Rapid Communication demonstrates that high-mobility oxide heterostructures such as this can provide good alternatives to conventional III-V semiconductors in spintronics and quantum computing as they do not have their unavoidable dephasing from nuclear spins. This paves a way for the development of qubits benefiting from the low defects of an undoped heterostructure together with the long spin lifetimes achievable in silicon.

原文English
文章編號121302
期刊Physical Review B
99
發行號12
DOIs
出版狀態Published - 2019 3月 25

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學

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