TY - JOUR
T1 - Quaternary Cu2NiSnS4 thin films as a solar material prepared through electrodeposition
AU - Chen, Hui Ju
AU - Fu, Sheng Wen
AU - Tsai, Tsung Chieh
AU - Shih, Chuan-Feng
PY - 2016/3/1
Y1 - 2016/3/1
N2 - Quaternary chalcopyrite compounds (Cu2XSnS4, X=Zn, Fe, Co, Ni) are promising candidate materials for thin-film solar cells because of their abundance and nontoxic compositions. Here, 1.2-μm-thick Cu2NiSnS4 (CNTS) thin films were successfully fabricated through electrodeposition. The structural, morphological, and optical properties of the CNTS thin films were characterized through high-resolution X-ray diffraction, field emission scanning electron microscopy, and ultraviolet-visible-near-infrared spectrophotometry. The bonding properties of CNTS was measured through Raman scattering, which revealed two principal Raman peaks of A1 mode at approximately 280 and 350 cm-1. The morphology of CNTS was uniform with an average grain size of 1±0.2 μm. The valences of the thin-film constituents were Cu+1, Ni+2, Sn+4, and S-2. The optical band gap of CNTS was approximately 1.2 eV, which is suitable for thin-film photovoltaic applications.
AB - Quaternary chalcopyrite compounds (Cu2XSnS4, X=Zn, Fe, Co, Ni) are promising candidate materials for thin-film solar cells because of their abundance and nontoxic compositions. Here, 1.2-μm-thick Cu2NiSnS4 (CNTS) thin films were successfully fabricated through electrodeposition. The structural, morphological, and optical properties of the CNTS thin films were characterized through high-resolution X-ray diffraction, field emission scanning electron microscopy, and ultraviolet-visible-near-infrared spectrophotometry. The bonding properties of CNTS was measured through Raman scattering, which revealed two principal Raman peaks of A1 mode at approximately 280 and 350 cm-1. The morphology of CNTS was uniform with an average grain size of 1±0.2 μm. The valences of the thin-film constituents were Cu+1, Ni+2, Sn+4, and S-2. The optical band gap of CNTS was approximately 1.2 eV, which is suitable for thin-film photovoltaic applications.
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U2 - 10.1016/j.matlet.2015.12.082
DO - 10.1016/j.matlet.2015.12.082
M3 - Article
AN - SCOPUS:84951269513
VL - 166
SP - 215
EP - 218
JO - Materials Letters
JF - Materials Letters
SN - 0167-577X
ER -