Quenched-In Bulk Defects and Interface States in MOS Structures Measured by Transient Capacitance Spectroscopy

研究成果: Article同行評審

18 引文 斯高帕斯(Scopus)

摘要

The induced defects and interface states in MOS structures as a result of high temperature oxidation are investigated using a transient capacitance technique. Samples alter dry oxidation at 1000 C were slowly cooled down to 700°C before pulling out. The densities of traps and interface states were shown to be two to five times lower for the slowly cooled samples than that for the fast cooled ones. The major bulk traps are at Ec -0.26 and Ec -0.49 eV, while the major interface state distribution resides at Ec -0.6 eV. The carrier generation both in the bulk and at the interface is shown to be reduced on slow cooling. The results suggest that the interface states and the bulk traps are the consequence of quenched-in impurities.

原文English
頁(從 - 到)1664-1667
頁數4
期刊Journal of the Electrochemical Society
125
發行號10
DOIs
出版狀態Published - 1978 十月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 可再生能源、永續發展與環境
  • 表面、塗料和薄膜
  • 電化學
  • 材料化學

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