Radiation effects in InGaAs/GaAs quantum dots: Is there a phonon bottleneck after all?

R. Leon, G. M. Swift, B. Magness, W. A. Taylor, Y. S. Tang, K. L. Wang, P. Dowd, Y. H. Zhang

研究成果: Conference article同行評審

摘要

The photoluminescence (PL) emission from equivalent InGaAs/GaAs quantum well (QW) and quantum dot (QD) structures are compared after controlled irradiation with 1.5 MeV proton fluxes. Results presented here show a significant enhancement in radiation tolerance with three-dimensional quantum confinement. Some additional radiation induced changes in photo-carrier recombination from QDs, which include a slight increase in PL emission with low and intermediate proton doses, are also examined.

原文English
頁(從 - 到)J5.9.1-J5.9.6
期刊Materials Research Society Symposium - Proceedings
642
出版狀態Published - 2001
事件Semiconductor Quantum Dots II - Boston, MA, United States
持續時間: 2000 十一月 272000 十一月 30

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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