Radio-frequency magnetron sputtering deposited ZnO-based TFBAR for humidity sensor applications

Chun Cheng Lin, Chun Ting Lin, Sheng-Yuan Chu

研究成果: Conference contribution

摘要

This article investigates a thin-film bulk acoustic-wave resonator (TFBAR) based on Li-doped ZnO (LZO) film. The LZO thin-film is deposited by radio frequency (RF) magnetron sputtering system and post-treated with ultraviolet (UV)-ozone illumination. The microstructural and chemical evolutions via various illumination times of the predominantly c-axis orientation LZO films are investigated. The largest piezoelectric coefficient (12.66 pC/N) of the LZO film is obtained after 90 min UV-ozone illumination, which can be ascribed to better crystallization and fewer oxygen-related defects. Furthermore, the fabricated TFBAR exhibits a high quality factor (Q = 1358) at ∼500 MHz and a good sensitivity under several relative humidity levels (30∼90% at room temperature in a standard atmosphere). The experimental results verify the LZO-based TFBAR is a candidate for humidity sensor applications.

原文English
主出版物標題Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018
發行者Institute of Electrical and Electronics Engineers Inc.
頁面1-4
頁數4
ISBN(電子)9781538614457
DOIs
出版狀態Published - 2018 六月 22
事件7th International Symposium on Next-Generation Electronics, ISNE 2018 - Taipei, Taiwan
持續時間: 2018 五月 72018 五月 9

出版系列

名字Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018

Other

Other7th International Symposium on Next-Generation Electronics, ISNE 2018
國家Taiwan
城市Taipei
期間18-05-0718-05-09

指紋

Humidity sensors
Magnetron sputtering
humidity
Resonators
radio frequencies
magnetron sputtering
resonators
Acoustic waves
Thin films
acoustics
Lighting
Ozone
illumination
sensors
thin films
ozone
reference atmospheres
chemical evolution
Crystallization
Q factors

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Instrumentation

引用此文

Lin, C. C., Lin, C. T., & Chu, S-Y. (2018). Radio-frequency magnetron sputtering deposited ZnO-based TFBAR for humidity sensor applications. 於 Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018 (頁 1-4). (Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISNE.2018.8394629
Lin, Chun Cheng ; Lin, Chun Ting ; Chu, Sheng-Yuan. / Radio-frequency magnetron sputtering deposited ZnO-based TFBAR for humidity sensor applications. Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018. Institute of Electrical and Electronics Engineers Inc., 2018. 頁 1-4 (Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018).
@inproceedings{7d8bf0c94af04393a8b6b90e83a8cb3e,
title = "Radio-frequency magnetron sputtering deposited ZnO-based TFBAR for humidity sensor applications",
abstract = "This article investigates a thin-film bulk acoustic-wave resonator (TFBAR) based on Li-doped ZnO (LZO) film. The LZO thin-film is deposited by radio frequency (RF) magnetron sputtering system and post-treated with ultraviolet (UV)-ozone illumination. The microstructural and chemical evolutions via various illumination times of the predominantly c-axis orientation LZO films are investigated. The largest piezoelectric coefficient (12.66 pC/N) of the LZO film is obtained after 90 min UV-ozone illumination, which can be ascribed to better crystallization and fewer oxygen-related defects. Furthermore, the fabricated TFBAR exhibits a high quality factor (Q = 1358) at ∼500 MHz and a good sensitivity under several relative humidity levels (30∼90{\%} at room temperature in a standard atmosphere). The experimental results verify the LZO-based TFBAR is a candidate for humidity sensor applications.",
author = "Lin, {Chun Cheng} and Lin, {Chun Ting} and Sheng-Yuan Chu",
year = "2018",
month = "6",
day = "22",
doi = "10.1109/ISNE.2018.8394629",
language = "English",
series = "Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1--4",
booktitle = "Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018",
address = "United States",

}

Lin, CC, Lin, CT & Chu, S-Y 2018, Radio-frequency magnetron sputtering deposited ZnO-based TFBAR for humidity sensor applications. 於 Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018. Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018, Institute of Electrical and Electronics Engineers Inc., 頁 1-4, 7th International Symposium on Next-Generation Electronics, ISNE 2018, Taipei, Taiwan, 18-05-07. https://doi.org/10.1109/ISNE.2018.8394629

Radio-frequency magnetron sputtering deposited ZnO-based TFBAR for humidity sensor applications. / Lin, Chun Cheng; Lin, Chun Ting; Chu, Sheng-Yuan.

Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 1-4 (Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018).

研究成果: Conference contribution

TY - GEN

T1 - Radio-frequency magnetron sputtering deposited ZnO-based TFBAR for humidity sensor applications

AU - Lin, Chun Cheng

AU - Lin, Chun Ting

AU - Chu, Sheng-Yuan

PY - 2018/6/22

Y1 - 2018/6/22

N2 - This article investigates a thin-film bulk acoustic-wave resonator (TFBAR) based on Li-doped ZnO (LZO) film. The LZO thin-film is deposited by radio frequency (RF) magnetron sputtering system and post-treated with ultraviolet (UV)-ozone illumination. The microstructural and chemical evolutions via various illumination times of the predominantly c-axis orientation LZO films are investigated. The largest piezoelectric coefficient (12.66 pC/N) of the LZO film is obtained after 90 min UV-ozone illumination, which can be ascribed to better crystallization and fewer oxygen-related defects. Furthermore, the fabricated TFBAR exhibits a high quality factor (Q = 1358) at ∼500 MHz and a good sensitivity under several relative humidity levels (30∼90% at room temperature in a standard atmosphere). The experimental results verify the LZO-based TFBAR is a candidate for humidity sensor applications.

AB - This article investigates a thin-film bulk acoustic-wave resonator (TFBAR) based on Li-doped ZnO (LZO) film. The LZO thin-film is deposited by radio frequency (RF) magnetron sputtering system and post-treated with ultraviolet (UV)-ozone illumination. The microstructural and chemical evolutions via various illumination times of the predominantly c-axis orientation LZO films are investigated. The largest piezoelectric coefficient (12.66 pC/N) of the LZO film is obtained after 90 min UV-ozone illumination, which can be ascribed to better crystallization and fewer oxygen-related defects. Furthermore, the fabricated TFBAR exhibits a high quality factor (Q = 1358) at ∼500 MHz and a good sensitivity under several relative humidity levels (30∼90% at room temperature in a standard atmosphere). The experimental results verify the LZO-based TFBAR is a candidate for humidity sensor applications.

UR - http://www.scopus.com/inward/record.url?scp=85050179089&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85050179089&partnerID=8YFLogxK

U2 - 10.1109/ISNE.2018.8394629

DO - 10.1109/ISNE.2018.8394629

M3 - Conference contribution

AN - SCOPUS:85050179089

T3 - Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018

SP - 1

EP - 4

BT - Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Lin CC, Lin CT, Chu S-Y. Radio-frequency magnetron sputtering deposited ZnO-based TFBAR for humidity sensor applications. 於 Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 1-4. (Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018). https://doi.org/10.1109/ISNE.2018.8394629