摘要
The electronic properties of vertically aligned ZnO nanorods have been investigated using micro-Raman spectroscopy. The concentration and mobility of the charge carriers were determined via Raman line shape analysis using longitudinal-optical-phonon-plasmon coupled mode. The local laser heating and the stress effects have been considered when analyzing the Raman spectra. The mobility and carrier concentration of the aligned ZnO nanorods are 84.8 cm2 V s and 3.8× 1017 cm-3, respectively. As a comparison, the mobility and carrier concentration of the undoped bulk ZnO were also obtained from the Raman line shape analysis. The mobility of the aligned ZnO nanorods is about 20% lower than that of the undoped bulk ZnO, which can be attributed to enhanced surface scattering due to the reduction in dimension.
原文 | English |
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文章編號 | 073104 |
期刊 | Journal of Applied Physics |
卷 | 105 |
發行號 | 7 |
DOIs | |
出版狀態 | Published - 2009 |
All Science Journal Classification (ASJC) codes
- 一般物理與天文學