Raman characterization and polarity tuning of aligned single-walled carbon nanotubes on quartz

Bo Lei, Koungmin Ryu, Lewis Gomez De-Arco, Song Han, Alexander Badmaev, Damon Farmer, Kevin Kim, Roy Gordon, Kang L. Wang, Chongwu Zhou

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

Raman characterization has been employed to study key features of highly aligned single-walled carbon nanotubes grown on quartz substrates. The nanotubes are observed to possess an estimated metallic/semiconducting ratio of 1 : 2:7, and Raman spectra also confirm the high integrity of nanotubes before and after being transferred from quartz to Si/SiO2 substrates. Based on the as-grown and the transferred aligned nanotubes, we have further fabricated top- and back-gated nanotube devices, respectively. The top-gated transistors exhibit ambipolar transport characteristics with high transconductance, small subthreshold swing of 110 mV/decade and on/off ratio of 107, while the back-gated transistors show unipolar p-type characteristics. Furthermore, we have demonstrated polarity tuning to produce both predominately n- and p-type top-gated carbon nanotube transistors by controlling the polarity of gate voltage during electrical breakdown, which has great potential for building complementary carbon nanotube circuits.

原文English
文章編號02BC02
期刊Japanese journal of applied physics
49
發行號2 PART 2
DOIs
出版狀態Published - 2010

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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