Raman spectra of Si-implanted GaSb

Y. K. Su, K. J. Gan, J. S. Hwang, Shing-Long Tyan

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35 引文 斯高帕斯(Scopus)

摘要

The variations of Raman spectra for Si-implanted (100) GaSb with various doses and energies were investigated. Samples implanted at room temperature showed disorder or amorphous layer. In order to heal the damage layer, furnace annealing as well as rapid thermal annealing were used. We got a better structural recovery with increasing the annealing temperature or time, and rapid thermal annealing showed better results in comparison with conventional furnace annealing. The relative intensities of longitudinal optical phonons from Raman spectra by rapid thermal annealing samples were compared with those of unimplanted GaSb. It is found that a better recovery of damage layer is formed comparable to an unimplanted wafer when the annealing temperature is 600 °C for 30 s.

原文English
頁(從 - 到)5584-5587
頁數4
期刊Journal of Applied Physics
68
發行號11
DOIs
出版狀態Published - 1990 十二月 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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