Rapid isothermal processing of strained GeSi layers

Deepak K. Nayak; Kamyar Kamjoo; Jin Suk Park; Jason C.S. Woo; Kang L. Wang

doi:10.1109/16.108212

Rapid isothermal processing of strained GeSi layers

Deepak K. Nayak, Kamyar Kamjoo, Jin Suk Park, Jason C.S. Woo, Kang L. Wang

電機資訊學院

研究成果: Article › 同行評審

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摘要

A cold-wall rapid thermal processor is used to study the oxidation and annealing properties of Ge_xSi_1-x strained layers. The dry oxidation rate of Ge_xSi_1-x is found to be the same as that of Si, while the wet oxidation rate is found to be higher than that of Si, and the oxidation rate increases with the Ge concentration (up to 20% in this study). A high fixed oxide charge density (>5 x 10¹¹/cm²) and interface trap level density (>10¹²/cm². eV) at the oxide interface have been determined from capacitance-voltage measurements. Using techniques such as X-ray rocking curve analysis, and I-V and C-V measurements of the p-n heterojunction, it is found that the degradation of electronic properties of metastable Ge_xSi₁__x strained layers during rapid thermal annealing are related to the formation of structural defects at the heterointerfaces.

原文	English
頁（從 - 到）	56-63
頁數	8
期刊	IEEE Transactions on Electron Devices
卷	39
發行號	1
DOIs	https://doi.org/10.1109/16.108212
出版狀態	Published - 1992 一月

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/16.108212

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@article{905112e59c304396b2a8eb4d326f91f6,

title = "Rapid isothermal processing of strained GeSi layers",

abstract = "A cold-wall rapid thermal processor is used to study the oxidation and annealing properties of GexSi1-x strained layers. The dry oxidation rate of GexSi1-x is found to be the same as that of Si, while the wet oxidation rate is found to be higher than that of Si, and the oxidation rate increases with the Ge concentration (up to 20% in this study). A high fixed oxide charge density (>5 x 1011/cm2) and interface trap level density (>1012/cm2. eV) at the oxide interface have been determined from capacitance-voltage measurements. Using techniques such as X-ray rocking curve analysis, and I-V and C-V measurements of the p-n heterojunction, it is found that the degradation of electronic properties of metastable GexSi1_x strained layers during rapid thermal annealing are related to the formation of structural defects at the heterointerfaces.",

author = "Nayak, {Deepak K.} and Kamyar Kamjoo and Park, {Jin Suk} and Woo, {Jason C.S.} and Wang, {Kang L.}",

note = "Funding Information: Manuscript received November 5, 1990; revised July 11, 1991. This work was supported in part by NSF and SRC. The authors are with the Department of Electrical Engineering, University of California, Los Angeles, CA 90024. IEEE Log Number 9104140.",

year = "1992",

month = jan,

doi = "10.1109/16.108212",

language = "English",

volume = "39",

pages = "56--63",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "1",

}

TY - JOUR

T1 - Rapid isothermal processing of strained GeSi layers

AU - Nayak, Deepak K.

AU - Kamjoo, Kamyar

AU - Park, Jin Suk

AU - Woo, Jason C.S.

AU - Wang, Kang L.

N1 - Funding Information: Manuscript received November 5, 1990; revised July 11, 1991. This work was supported in part by NSF and SRC. The authors are with the Department of Electrical Engineering, University of California, Los Angeles, CA 90024. IEEE Log Number 9104140.

PY - 1992/1

Y1 - 1992/1

N2 - A cold-wall rapid thermal processor is used to study the oxidation and annealing properties of GexSi1-x strained layers. The dry oxidation rate of GexSi1-x is found to be the same as that of Si, while the wet oxidation rate is found to be higher than that of Si, and the oxidation rate increases with the Ge concentration (up to 20% in this study). A high fixed oxide charge density (>5 x 1011/cm2) and interface trap level density (>1012/cm2. eV) at the oxide interface have been determined from capacitance-voltage measurements. Using techniques such as X-ray rocking curve analysis, and I-V and C-V measurements of the p-n heterojunction, it is found that the degradation of electronic properties of metastable GexSi1_x strained layers during rapid thermal annealing are related to the formation of structural defects at the heterointerfaces.

AB - A cold-wall rapid thermal processor is used to study the oxidation and annealing properties of GexSi1-x strained layers. The dry oxidation rate of GexSi1-x is found to be the same as that of Si, while the wet oxidation rate is found to be higher than that of Si, and the oxidation rate increases with the Ge concentration (up to 20% in this study). A high fixed oxide charge density (>5 x 1011/cm2) and interface trap level density (>1012/cm2. eV) at the oxide interface have been determined from capacitance-voltage measurements. Using techniques such as X-ray rocking curve analysis, and I-V and C-V measurements of the p-n heterojunction, it is found that the degradation of electronic properties of metastable GexSi1_x strained layers during rapid thermal annealing are related to the formation of structural defects at the heterointerfaces.

UR - http://www.scopus.com/inward/record.url?scp=0026743471&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026743471&partnerID=8YFLogxK

U2 - 10.1109/16.108212

DO - 10.1109/16.108212

M3 - Article

AN - SCOPUS:0026743471

VL - 39

SP - 56

EP - 63

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 1

ER -