Rapid thermal annealed InGaN/GaN Flip-Chip LEDs

W. S. Chen, S. C. Shei, S. J. Chang, Y. K. Su, W. C. Lai, C. H. Kuo, Y. C. Lin, C. S. Chang, T. K. Ko, Y. P. Hsu, C. F. Shen

研究成果: Article同行評審

19 引文 斯高帕斯(Scopus)

摘要

Nitride-based flip-chip (FC) light-emitting diodes (LEDs) emitting at 465 nm with Ni transparent ohmic contact layers and Ag reflective mirrors were fabricated. With an incident light wavelength of 465 nm, it was found that transmittance of normalized 300°C rapid thermal annealed (RTA) Ni(2.5 nm) Mas 93% while normalized reflectance of 300°C RTA Ni(2.5 nm)/Ag(200 nm) was 92%. It was also found that 300°C RTA Ni(2.5 nm) formed good ohmic contact on n+ short-period-superlattice structure with specific contact resistance of 7.8 × 10-4 Ω·cm2. With 20-mA current injection, it was found that forward voltage and output power were 3.15 V and 16.2 mW for FC LED with 300°C RTA Ni(2.5 nm)/Ag(200 nm). Furthermore, it was found that reliabilities of FC LEDs were good.

原文English
頁(從 - 到)32-36
頁數5
期刊IEEE Transactions on Electron Devices
53
發行號1
DOIs
出版狀態Published - 2006 1月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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