Reaction of Ta thin film with single crystalline (001) β-SiC

J. S. Chen, E. Kolawa, M. A. Nicolet, R. P. Ruiz, L. Baud, C. Jaussaud, R. Madar

研究成果: Article同行評審

23 引文 斯高帕斯(Scopus)

摘要

The reaction between a sputter-deposited Ta film (320 nm thick) and a single crystalline (001) β-SiC substrate induced by vacuum annealing at temperatures of 600-1200°C for 1 h (30 min at 1100°C) is investigated by 3 MeV He++ backscattering spectrometry, x-ray diffraction, secondary ion mass spectrometry, and transmission and scanning electron microscopies. No significant reaction is observed at 800°C or at lower temperatures. At 900°C, the main product phases are Ta2C and carbon-stabilized Ta5Si3. A minor amount of unreacted Ta is also present. After annealing at 1000°C, all the tantalum has reacted; the reaction zone possesses a multilayered structure of β-SiC/TaC/carbon-stabilized Ta 5Si3/α-Ta5Si3/Ta2C. The diffusion path at 1000°C is plotted on the isothermal section of the Ta-Si-C phase diagram. At 1100°C, the reacted layer has an interface with the SiC substrate that is still quite flat but has a rough surface due to the formation of macroscopic voids within the reacted layer. The equilibrium products predicted by the phase diagram are TaC and TaSi2. This final state is reached by annealing at 1200°C for 1 h. At that point, the reacted layer has a laterally very uneven structure and morphology.

原文English
頁(從 - 到)2169-2175
頁數7
期刊Journal of Applied Physics
76
發行號4
DOIs
出版狀態Published - 1994

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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