TY - GEN
T1 - Realization of a ferromagnetic ordering in an ultrathin layer of antiferromagnetic β-Co(OH)2 grown on a reduced graphene oxide sheet
AU - Debnath, Anup
AU - Saha, Shyamal Kumar
N1 - Publisher Copyright:
© 2019 Author(s).
PY - 2019/10/29
Y1 - 2019/10/29
N2 - Study of the interface interaction between an antiferromagnetic and a nonmagnetic or a diamagnetic material has a great interest in the area of research of the condensed matter physics. The β-Co(OH)2 is an antiferromagnetic layer type material having a Neel temperature of ∼11 K. The parallel Co spins are arranged in a single layer, and the antiparallel Co spins are arranged in alternate layers. Here, a thin layer of β-Co(OH)2 has been grown on a reduced graphene oxide (rGO) surface and ferromagnetism has been achieved. Ferromagnetism in the rGO/β-Co(OH)2 heterostructure arises because of charge transfer, and hence the reduction of Co spin moments of the adjacent layer of rGO surface. A huge coercivity of amount 2000 Oe at the temperature of 2 K, with a very low magnetic field for saturation of magnetization, has been observed for this heterostructure.
AB - Study of the interface interaction between an antiferromagnetic and a nonmagnetic or a diamagnetic material has a great interest in the area of research of the condensed matter physics. The β-Co(OH)2 is an antiferromagnetic layer type material having a Neel temperature of ∼11 K. The parallel Co spins are arranged in a single layer, and the antiparallel Co spins are arranged in alternate layers. Here, a thin layer of β-Co(OH)2 has been grown on a reduced graphene oxide (rGO) surface and ferromagnetism has been achieved. Ferromagnetism in the rGO/β-Co(OH)2 heterostructure arises because of charge transfer, and hence the reduction of Co spin moments of the adjacent layer of rGO surface. A huge coercivity of amount 2000 Oe at the temperature of 2 K, with a very low magnetic field for saturation of magnetization, has been observed for this heterostructure.
UR - https://www.scopus.com/pages/publications/85074773351
UR - https://www.scopus.com/pages/publications/85074773351#tab=citedBy
U2 - 10.1063/1.5130274
DO - 10.1063/1.5130274
M3 - Conference contribution
AN - SCOPUS:85074773351
T3 - AIP Conference Proceedings
BT - Proceedings of the International Conference on Advanced Materials, ICAM 2019
A2 - Sadasivuni, Kishor Kumar
A2 - Kurian, Joji
A2 - Damodaran, Sudheesh Vilasini
A2 - Joseph, Joshy
A2 - Joseph, Deepu
A2 - Tom, Emmanuel
A2 - Thomas, Deepu
PB - American Institute of Physics Inc.
T2 - International Conference on Advanced Materials, ICAM 2019
Y2 - 12 June 2019 through 14 June 2019
ER -