Recombination dynamics of a localized exciton bound at basal stacking faults within the m -plane ZnO film

S. Yang, H. C. Hsu, W. R. Liu, B. H. Lin, C. C. Kuo, C. H. Hsu, M. O. Eriksson, P. O. Holtz, W. F. Hsieh

研究成果: Article同行評審

11 引文 斯高帕斯(Scopus)

摘要

We investigated the carrier dynamics near basal stacking faults (BSFs) in m-plane ZnO epitaxial film. The behaviors of the type-II quantum wells related to the BSFs are verified through time-resolved and time-integrated photoluminescence. The decay time of the emission of BSFs is observed to have a higher power law value and longer decay time than the emission of the donor-bound excitons. The spectral-dependent decay times reveal a phenomenon of carriers migrating among band tail states, which are related to the spatial distribution of the type-II quantum wells formed by the BSFs. A high density of excited carriers leads to a band bending effect, which in turn causes a blue-shift of the emission peak of BSFs with a broadened distribution of band tail states.

原文English
文章編號011106
期刊Applied Physics Letters
105
發行號1
DOIs
出版狀態Published - 2014 7月 7

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

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