Rectifying characteristics of WSi 0.8-GaN Schottky barrier diodes with a GaN cap layer grown at low temperature

J. K. Sheu, M. L. Lee, W. C. Lai, H. C. Tseng, G. C. Chi

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

Undoped GaN/low-temperature (LT) GaNW Si0.8 and undoped GaNW Si0.8 Schottky barrier contacts were prepared. Introducing the LT GaN on top of the conventional structures markedly reduced the leakage current and increased the barrier height. The measured barrier heights of the LT GaN-caped samples and the conventional samples were around 1 and 0.55 eV, respectively. The thermal stability of the Schottky barrier contacts was also studied and the barrier height was shown to be very stable even when the annealing temperature was increased to 950 °C for 1 h.

原文English
文章編號036106
期刊Journal of Applied Physics
98
發行號3
DOIs
出版狀態Published - 2005 8月 1

All Science Journal Classification (ASJC) codes

  • 物理與天文學 (全部)

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