Rectifying characteristics of WSi 0.8-GaN Schottky barrier diodes with a GaN cap layer grown at low temperature

J. K. Sheu, M. L. Lee, W. C. Lai, H. C. Tseng, G. C. Chi

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

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Physics & Astronomy