Redox-hopping and electrochemical behaviors of metal−organic framework thin films fabricated by various approaches

Cheng Hsun Chuang, Jun Hong Li, Yu Chuan Chen, Yi Sen Wang, Chung Wei Kung

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

In this study, spatially dispersed redox-active iridium sites are installed on the nodes of a zirconium-based metal−organic framework (MOF), UiO-66, utilizing a self-limiting solution-phase solvothermal deposition in MOF technique. Thin films of the resulting iridium-decorated UiO-66 are then fabricated on conducting substrates by three distinct approaches: drop-casting, spin-coating, and bottom-up solvothermal methods. The redox-hopping and electrochemical behaviors of the iridium-decorated UiO-66 thin films fabricated by distinct methods are investigated. The findings indicate that the rate of charge hopping in these redox-active MOF thin films is not significantly affected by both the method for fabricating thin films and the film thickness. However, remarkably distinct electrochemical behaviors are observed for the iridium-decorated UiO-66 thin films fabricated by different approaches, which suggests that the approach for fabricating MOF thin films may play an important role in the performances of the targeted electrochemical applications.

原文English
頁(從 - 到)20854-20863
頁數10
期刊Journal of Physical Chemistry C
124
發行號38
DOIs
出版狀態Published - 2020 九月 24

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 能源(全部)
  • 物理與理論化學
  • 表面、塗料和薄膜

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