摘要
The effect of laser annealing on important detector characteristics such as dark current, spectral response, and absolute responsivity is investigated for bound-to-continuum GaAs/AlGaAs quantum-well infrared photodetectors (QWIPs) operating in the 8-12 μm wavelength regime. A set of experiments was conducted on QWIPs fabricated from both as-grown and laser-annealed multiple-quantum-well structures. Compared to the as-grown structure, the peak spectral response of the laser-annealed structure was shifted to longer wavelengths, though absolute responsivity was decreased by about a factor of two. In addition, over a wide range of bias levels, the laser-annealed QWIPs exhibited a slightly lower dark current compared to the as-grown QWIPs. Thus, the postgrowth control of GaAs/AlGaAs quantum-well composition profiles by laser annealing offers unique opportunities to fine tune various aspects of a QWIP' s response.
原文 | English |
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頁(從 - 到) | 3573-3575 |
頁數 | 3 |
期刊 | Applied Physics Letters |
卷 | 70 |
發行號 | 26 |
DOIs | |
出版狀態 | Published - 1997 六月 30 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)