Redshifting of a bound-to-continuum GaAs/AIGaAs quantum-well infrared photodetector response via laser annealing

D. K. Sengupta, T. Horton, W. Fang, A. Curtis, J. Li, S. L. Chuang, H. Chen, M. Feng, G. E. Stillman, A. Kar, J. Mazumder, L. Li, H. C. Liu

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13 引文 斯高帕斯(Scopus)

摘要

The effect of laser annealing on important detector characteristics such as dark current, spectral response, and absolute responsivity is investigated for bound-to-continuum GaAs/AlGaAs quantum-well infrared photodetectors (QWIPs) operating in the 8-12 μm wavelength regime. A set of experiments was conducted on QWIPs fabricated from both as-grown and laser-annealed multiple-quantum-well structures. Compared to the as-grown structure, the peak spectral response of the laser-annealed structure was shifted to longer wavelengths, though absolute responsivity was decreased by about a factor of two. In addition, over a wide range of bias levels, the laser-annealed QWIPs exhibited a slightly lower dark current compared to the as-grown QWIPs. Thus, the postgrowth control of GaAs/AlGaAs quantum-well composition profiles by laser annealing offers unique opportunities to fine tune various aspects of a QWIP' s response.

原文English
頁(從 - 到)3573-3575
頁數3
期刊Applied Physics Letters
70
發行號26
DOIs
出版狀態Published - 1997 六月 30

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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