Reduced current thresholds in GaAs/AlGaAs vertical cavity surface emitting lasers using 4° off-oriented (001) GaAs substrates

Y. H. Wang; K. Tai; Y. F. Hsieh; S. N.G. Chu; J. D. Wynn; M. Hong; R. J. Fischer; A. Y. Cho

doi:10.1016/0022-0248(91)91132-T

Reduced current thresholds in GaAs/AlGaAs vertical cavity surface emitting lasers using 4° off-oriented (001) GaAs substrates

Y. H. Wang, K. Tai, Y. F. Hsieh, S. N.G. Chu, J. D. Wynn, M. Hong, R. J. Fischer, A. Y. Cho

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2 引文斯高帕斯（Scopus）

摘要

GaAs/AlGaAs vertical cavity surface emitting lasers (VCSELs) with two semiconductor distributed Bragg reflectors (DBRs) were grown by molecular beam epitaxy. The threshold current was found to be 20-50% less on an average for the bulk VCSELs with an active layer of 0.47 μm thick grown on the 4° off-orientation (001) substrates than those on the on-orientation ones. The lower threshold current was attributed to the smoother interfaces of the Al_0.1Ga_0.9As/AlAs DBRs in the off-orientation growth observed by transmission electron microscopy.

原文	English
頁（從 - 到）	1057-1061
頁數	5
期刊	Journal of Crystal Growth
卷	111
發行號	1-4
DOIs	https://doi.org/10.1016/0022-0248(91)91132-T
出版狀態	Published - 1991 5月 2

All Science Journal Classification (ASJC) codes

凝聚態物理學
無機化學
材料化學

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10.1016/0022-0248(91)91132-T

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@article{38bbe08e4e7a40c1b869c6fb6aa51d19,

title = "Reduced current thresholds in GaAs/AlGaAs vertical cavity surface emitting lasers using 4° off-oriented (001) GaAs substrates",

abstract = "GaAs/AlGaAs vertical cavity surface emitting lasers (VCSELs) with two semiconductor distributed Bragg reflectors (DBRs) were grown by molecular beam epitaxy. The threshold current was found to be 20-50% less on an average for the bulk VCSELs with an active layer of 0.47 μm thick grown on the 4° off-orientation (001) substrates than those on the on-orientation ones. The lower threshold current was attributed to the smoother interfaces of the Al0.1Ga0.9As/AlAs DBRs in the off-orientation growth observed by transmission electron microscopy.",

author = "Wang, {Y. H.} and K. Tai and Hsieh, {Y. F.} and Chu, {S. N.G.} and Wynn, {J. D.} and M. Hong and Fischer, {R. J.} and Cho, {A. Y.}",

year = "1991",

month = may,

day = "2",

doi = "10.1016/0022-0248(91)91132-T",

language = "English",

volume = "111",

pages = "1057--1061",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "1-4",

}

TY - JOUR

T1 - Reduced current thresholds in GaAs/AlGaAs vertical cavity surface emitting lasers using 4° off-oriented (001) GaAs substrates

AU - Wang, Y. H.

AU - Tai, K.

AU - Hsieh, Y. F.

AU - Chu, S. N.G.

AU - Wynn, J. D.

AU - Hong, M.

AU - Fischer, R. J.

AU - Cho, A. Y.

PY - 1991/5/2

Y1 - 1991/5/2

N2 - GaAs/AlGaAs vertical cavity surface emitting lasers (VCSELs) with two semiconductor distributed Bragg reflectors (DBRs) were grown by molecular beam epitaxy. The threshold current was found to be 20-50% less on an average for the bulk VCSELs with an active layer of 0.47 μm thick grown on the 4° off-orientation (001) substrates than those on the on-orientation ones. The lower threshold current was attributed to the smoother interfaces of the Al0.1Ga0.9As/AlAs DBRs in the off-orientation growth observed by transmission electron microscopy.

AB - GaAs/AlGaAs vertical cavity surface emitting lasers (VCSELs) with two semiconductor distributed Bragg reflectors (DBRs) were grown by molecular beam epitaxy. The threshold current was found to be 20-50% less on an average for the bulk VCSELs with an active layer of 0.47 μm thick grown on the 4° off-orientation (001) substrates than those on the on-orientation ones. The lower threshold current was attributed to the smoother interfaces of the Al0.1Ga0.9As/AlAs DBRs in the off-orientation growth observed by transmission electron microscopy.

UR - http://www.scopus.com/inward/record.url?scp=0026413262&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026413262&partnerID=8YFLogxK

U2 - 10.1016/0022-0248(91)91132-T

DO - 10.1016/0022-0248(91)91132-T

M3 - Article

AN - SCOPUS:0026413262

SN - 0022-0248

VL - 111

SP - 1057

EP - 1061

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

ER -

Reduced current thresholds in GaAs/AlGaAs vertical cavity surface emitting lasers using 4° off-oriented (001) GaAs substrates

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