A graphene charge-trap memory is devised using a single-layer graphene channel with an Al2O3/AlOx/Al2O 3 oxide stack, where the ion-bombarded AlOx layer is intentionally added to create an abundance of charge-trap sites. The low dielectric constant of AlOx compared to Al2O3 reduces the potential drop in the control oxide Al2O3 and suppresses the electron back-injection from the gate to the charge-storage layer, allowing the memory window of the device to be further extended. This shows that the usage of a lower dielectric constant in the charge-storage layer compared to that of the control oxide layer improves the memory performance for graphene charge-trap memories.
|期刊||Applied Physics Letters|
|出版狀態||Published - 2012 12月 10|
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