Reduction of dark current in AlGaN-GaN Schottky-barrier photodetectors with a low-temperature-grown GaN cap layer

M. L. Lee, J. K. Sheu, Y. K. Su, S. J. Chang, W. C. Lai, G. C. Chi

研究成果: Article同行評審

35 引文 斯高帕斯(Scopus)

摘要

AlGaN-GaN-based UV Schottky-barrier photodetectors with (i.e., sample A) and without (i.e., sample B) the low-temperature (LT) GaN cap layer were both fabricated. It was found that we could achieve a lower leakage current from sample A. Under reverse bias, it was found that sample A showed a dark current as low as 2 × 10-11 A at -5 V. In contrast, the dark current of sample B was at least one order of magnitude larger. With an incident light wavelength of 320 nm and a - 1 V reverse bias, the measured responsivity was around 0.03 and 0.015 A/W for samples A and B, respectively.

原文English
頁(從 - 到)593-595
頁數3
期刊IEEE Electron Device Letters
25
發行號9
DOIs
出版狀態Published - 2004 九月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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