Reduction of dark current in AlGaN/GaN Schottky barrier photodetectors with a low-temperature-grown GaN cap layer

G. C. Chi; J. K. Sheu; M. L. Lee; C. J. Kao; Y. K. Su; S. J. Chang; W. C. Lai

doi:10.1557/proc-798-y10.11

Reduction of dark current in AlGaN/GaN Schottky barrier photodetectors with a low-temperature-grown GaN cap layer

G. C. Chi, J. K. Sheu, M. L. Lee, C. J. Kao, Y. K. Su, S. J. Chang, W. C. Lai

研究成果: Conference article › 同行評審

摘要

AlGaN/GaN-based ultraviolet (UV) Schottky barrier photodetectors (PDs) with and without the LT GaN cap layer were both fabricated. It was found that we could achieve a lower leakage current from sample A. With incident light wavelength of 320 nm and a -1 V reverse bias, the measured responsivity was around 0.03 A/W and 0.015 A/W for samples with and without the LT GaN cap layer, respectively. The response speed of the sample A was also found to be faster.

原文	English
頁（從 - 到）	353-358
頁數	6
期刊	Materials Research Society Symposium - Proceedings
卷	798
DOIs	https://doi.org/10.1557/proc-798-y10.11
出版狀態	Published - 2003
事件	GaN and Related Alloys - 2003 - Boston, MA, United States 持續時間: 2003 十二月 1 → 2003 十二月 5

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

存取文件

10.1557/proc-798-y10.11

其它文件與鏈接

指紋深入研究「Reduction of dark current in AlGaN/GaN Schottky barrier photodetectors with a low-temperature-grown GaN cap layer」主題。共同形成了獨特的指紋。

引用此

@article{08fef0610fb442ddbe3acbeac28dab87,

title = "Reduction of dark current in AlGaN/GaN Schottky barrier photodetectors with a low-temperature-grown GaN cap layer",

abstract = "AlGaN/GaN-based ultraviolet (UV) Schottky barrier photodetectors (PDs) with and without the LT GaN cap layer were both fabricated. It was found that we could achieve a lower leakage current from sample A. With incident light wavelength of 320 nm and a -1 V reverse bias, the measured responsivity was around 0.03 A/W and 0.015 A/W for samples with and without the LT GaN cap layer, respectively. The response speed of the sample A was also found to be faster.",

author = "Chi, {G. C.} and Sheu, {J. K.} and Lee, {M. L.} and Kao, {C. J.} and Su, {Y. K.} and Chang, {S. J.} and Lai, {W. C.}",

year = "2003",

doi = "10.1557/proc-798-y10.11",

language = "English",

volume = "798",

pages = "353--358",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

}

TY - JOUR

T1 - Reduction of dark current in AlGaN/GaN Schottky barrier photodetectors with a low-temperature-grown GaN cap layer

AU - Chi, G. C.

AU - Sheu, J. K.

AU - Lee, M. L.

AU - Kao, C. J.

AU - Su, Y. K.

AU - Chang, S. J.

AU - Lai, W. C.

PY - 2003

Y1 - 2003

N2 - AlGaN/GaN-based ultraviolet (UV) Schottky barrier photodetectors (PDs) with and without the LT GaN cap layer were both fabricated. It was found that we could achieve a lower leakage current from sample A. With incident light wavelength of 320 nm and a -1 V reverse bias, the measured responsivity was around 0.03 A/W and 0.015 A/W for samples with and without the LT GaN cap layer, respectively. The response speed of the sample A was also found to be faster.

AB - AlGaN/GaN-based ultraviolet (UV) Schottky barrier photodetectors (PDs) with and without the LT GaN cap layer were both fabricated. It was found that we could achieve a lower leakage current from sample A. With incident light wavelength of 320 nm and a -1 V reverse bias, the measured responsivity was around 0.03 A/W and 0.015 A/W for samples with and without the LT GaN cap layer, respectively. The response speed of the sample A was also found to be faster.

UR - http://www.scopus.com/inward/record.url?scp=2942635580&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=2942635580&partnerID=8YFLogxK

U2 - 10.1557/proc-798-y10.11

DO - 10.1557/proc-798-y10.11

M3 - Conference article

AN - SCOPUS:2942635580

VL - 798

SP - 353

EP - 358

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

T2 - GaN and Related Alloys - 2003

Y2 - 1 December 2003 through 5 December 2003

ER -