Reduction of dark current in AlGaN/GaN Schottky barrier photodetectors with a low-temperature-grown GaN cap layer

G. C. Chi, J. K. Sheu, M. L. Lee, C. J. Kao, Y. K. Su, S. J. Chang, W. C. Lai

研究成果: Conference article

摘要

AlGaN/GaN-based ultraviolet (UV) Schottky barrier photodetectors (PDs) with and without the LT GaN cap layer were both fabricated. It was found that we could achieve a lower leakage current from sample A. With incident light wavelength of 320 nm and a -1 V reverse bias, the measured responsivity was around 0.03 A/W and 0.015 A/W for samples with and without the LT GaN cap layer, respectively. The response speed of the sample A was also found to be faster.

原文English
頁（從 - 到）353-358
頁數6
期刊Materials Research Society Symposium - Proceedings
卷798
出版狀態Published - 2003 十二月 1
事件GaN and Related Alloys - 2003 - Boston, MA, United States
持續時間: 2003 十二月 1 → 2003 十二月 5

指紋

Dark currents
Photodetectors
dark current
caps
Leakage currents
photometers
Wavelength
Temperature
leakage
wavelengths
aluminum gallium nitride

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

引用此文

Chi, G. C. ; Sheu, J. K. ; Lee, M. L. ; Kao, C. J. ; Su, Y. K. ; Chang, S. J. ; Lai, W. C. / Reduction of dark current in AlGaN/GaN Schottky barrier photodetectors with a low-temperature-grown GaN cap layer. 於: Materials Research Society Symposium - Proceedings. 2003 ; 卷 798. 頁 353-358.
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abstract = "AlGaN/GaN-based ultraviolet (UV) Schottky barrier photodetectors (PDs) with and without the LT GaN cap layer were both fabricated. It was found that we could achieve a lower leakage current from sample A. With incident light wavelength of 320 nm and a -1 V reverse bias, the measured responsivity was around 0.03 A/W and 0.015 A/W for samples with and without the LT GaN cap layer, respectively. The response speed of the sample A was also found to be faster.",
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Chi, GC, Sheu, JK, Lee, ML, Kao, CJ, Su, YK, Chang, SJ & Lai, WC 2003, 'Reduction of dark current in AlGaN/GaN Schottky barrier photodetectors with a low-temperature-grown GaN cap layer', Materials Research Society Symposium - Proceedings, 卷 798, 頁 353-358.

Reduction of dark current in AlGaN/GaN Schottky barrier photodetectors with a low-temperature-grown GaN cap layer. / Chi, G. C.; Sheu, J. K.; Lee, M. L.; Kao, C. J.; Su, Y. K.; Chang, S. J.; Lai, W. C.

於: Materials Research Society Symposium - Proceedings, 卷 798, 01.12.2003, p. 353-358.

研究成果: Conference article

TY - JOUR

T1 - Reduction of dark current in AlGaN/GaN Schottky barrier photodetectors with a low-temperature-grown GaN cap layer

AU - Chi, G. C.

AU - Sheu, J. K.

AU - Lee, M. L.

AU - Kao, C. J.

AU - Su, Y. K.

AU - Chang, S. J.

AU - Lai, W. C.

PY - 2003/12/1

Y1 - 2003/12/1

N2 - AlGaN/GaN-based ultraviolet (UV) Schottky barrier photodetectors (PDs) with and without the LT GaN cap layer were both fabricated. It was found that we could achieve a lower leakage current from sample A. With incident light wavelength of 320 nm and a -1 V reverse bias, the measured responsivity was around 0.03 A/W and 0.015 A/W for samples with and without the LT GaN cap layer, respectively. The response speed of the sample A was also found to be faster.

AB - AlGaN/GaN-based ultraviolet (UV) Schottky barrier photodetectors (PDs) with and without the LT GaN cap layer were both fabricated. It was found that we could achieve a lower leakage current from sample A. With incident light wavelength of 320 nm and a -1 V reverse bias, the measured responsivity was around 0.03 A/W and 0.015 A/W for samples with and without the LT GaN cap layer, respectively. The response speed of the sample A was also found to be faster.

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M3 - Conference article

AN - SCOPUS:2942635580

VL - 798

SP - 353

EP - 358

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

ER -

Chi GC, Sheu JK, Lee ML, Kao CJ, Su YK, Chang SJ 等. Reduction of dark current in AlGaN/GaN Schottky barrier photodetectors with a low-temperature-grown GaN cap layer. Materials Research Society Symposium - Proceedings. 2003 12月 1;798:353-358.

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