摘要
AlGaN/GaN-based ultraviolet (UV) Schottky barrier photodetectors (PDs) with and without the LT GaN cap layer were both fabricated. It was found that we could achieve a lower leakage current from sample A. With incident light wavelength of 320 nm and a -1 V reverse bias, the measured responsivity was around 0.03 A/W and 0.015 A/W for samples with and without the LT GaN cap layer, respectively. The response speed of the sample A was also found to be faster.
原文 | English |
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頁(從 - 到) | 353-358 |
頁數 | 6 |
期刊 | Materials Research Society Symposium - Proceedings |
卷 | 798 |
DOIs | |
出版狀態 | Published - 2003 |
事件 | GaN and Related Alloys - 2003 - Boston, MA, United States 持續時間: 2003 12月 1 → 2003 12月 5 |
All Science Journal Classification (ASJC) codes
- 材料科學(全部)
- 凝聚態物理學
- 材料力學
- 機械工業