Reduction of the dislocation density for GaAs thin films on Si substrates grown by molecular beam epitaxy using the two-step growth method

Y. D. Woo, H. I. Lee, T. W. Kang, T. W. Kim, K. L. Wang

研究成果: Article同行評審

原文English
頁(從 - 到)1340-1343
頁數4
期刊Journal of Materials Science Letters
14
發行號19
DOIs
出版狀態Published - 1995 一月

All Science Journal Classification (ASJC) codes

  • 材料科學(全部)

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