Refractory metal silicide formation by ion implantation

K. L. Wang, S. W. Chiang, F. Bacon, R. F. Reihl

研究成果: Article同行評審

8 引文 斯高帕斯(Scopus)

摘要

A systematic study of interface mixing of transition metal-Si structures by ion implantation was carried out. High resolution Auger analyses at the mixed region of the implanted samples showed an energy shift of the Auger Si LVV transition and a change in the spectrum relative to that of elemental silicon. The elemental depth distribution obtained using Auger electron spectroscopy combined with ion sputtering illustrated a composition plateau for the ion-implanted structures. The X-ray diffraction data show the presence of silicides. These results illustrated metal silicide formation and a reduction in the thermal reaction barrier for forming refractory metal silicides by ion implantation.

原文English
頁(從 - 到)239-244
頁數6
期刊Thin Solid Films
74
發行號2
DOIs
出版狀態Published - 1980 十二月 15

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 表面和介面
  • 表面、塗料和薄膜
  • 金屬和合金
  • 材料化學

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