TY - JOUR
T1 - Regenerative Switching Phenomenon of a GaAs Metal-n-δ(P+)-n-n+ Structure
AU - Guo, Der Feng
AU - Yeou, Wen Chen
AU - Lour, Wen Shiung
AU - Hsu, Wei Chou
AU - Liu, Wen Chau
PY - 1993/7
Y1 - 1993/7
N2 - A new GaAs regenerative switching device with metal-n-δ(p+)-n-n+ structure has been fabricated and demonstrated. An In GaAs delta-doped quantum well was employed to provide the potential barrier for carriers transport and improve the confinement effect of holes. Due to the sequential avalanche multiplication near the reverse biased n-GaAs layer and the Schottky-semiconductor (M-S) junction, an interestingly double S-shaped negative-differential-resistance (NDR) phenomenon and three different operation points were obtained at low temperature. However, only single S-shaped NDR behavior was observed at room temperature due to the higher thermal energy and poor carrier confinement effect. Therefore, with an appropriate adjustments on device parameters, the proposed structure is suitable for switching device and multiple-value logic circuit applications.
AB - A new GaAs regenerative switching device with metal-n-δ(p+)-n-n+ structure has been fabricated and demonstrated. An In GaAs delta-doped quantum well was employed to provide the potential barrier for carriers transport and improve the confinement effect of holes. Due to the sequential avalanche multiplication near the reverse biased n-GaAs layer and the Schottky-semiconductor (M-S) junction, an interestingly double S-shaped negative-differential-resistance (NDR) phenomenon and three different operation points were obtained at low temperature. However, only single S-shaped NDR behavior was observed at room temperature due to the higher thermal energy and poor carrier confinement effect. Therefore, with an appropriate adjustments on device parameters, the proposed structure is suitable for switching device and multiple-value logic circuit applications.
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U2 - 10.1143/JJAP.32.L1011
DO - 10.1143/JJAP.32.L1011
M3 - Article
AN - SCOPUS:0027628482
VL - 32
SP - L1011-L1013
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 7
ER -