A new GaAs regenerative switching device with metal-n-δ(p+)-n-n+ structure has been fabricated and demonstrated. An In GaAs delta-doped quantum well was employed to provide the potential barrier for carriers transport and improve the confinement effect of holes. Due to the sequential avalanche multiplication near the reverse biased n-GaAs layer and the Schottky-semiconductor (M-S) junction, an interestingly double S-shaped negative-differential-resistance (NDR) phenomenon and three different operation points were obtained at low temperature. However, only single S-shaped NDR behavior was observed at room temperature due to the higher thermal energy and poor carrier confinement effect. Therefore, with an appropriate adjustments on device parameters, the proposed structure is suitable for switching device and multiple-value logic circuit applications.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)