A molecular beam epitaxially grown GaAs three-terminal switching device with controllable S-shaped negative differential resistance (NDR) and switching voltages has been fabricated and demonstrated. The current-voltage and switching characteristics of this device are excellent and reproducible. The switching voltage VS=9.6 V and holding voltage VH=5.1 V are obtained under two-terminal operation. If a base current IB is applied, this device exhibits a controllable S-shaped NDR phenomena both at the forward and reverse IB conditions. A bipolar transistor behavior with a current gain of over 20 is further achieved when the forward IB is employed. The proposed device having good potential for high speed and switching circuit applications has been shown by the results.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)