Relationships of electrical properties and melting threshold in laser-annealed ion-implanted silicon

K. L. Wang, Y. S. Liu, C. Burman

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

This paper describes a study comparing the results of the electrical measurements and the regrowth behavior of ion-implanted silicon annealed with an 80-ns (FWHM) laser pulse at 1.06 μm. Certain correlations were established among the threshold energy density required for melting, the dopant distributions, and the diode junction depth and leakage. It is demonstrated that in order to obtain low-leakage diodes, the anneaing energy density, which depends upon the implant conditions, far exceeds the melting energy density as determined from the transient optical-reflectivity change.

原文English
頁(從 - 到)263-265
頁數3
期刊Applied Physics Letters
35
發行號3
DOIs
出版狀態Published - 1979

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

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