Relaxed Si1-xGex films with reduced dislocation densities grown by molecular beam epitaxy

Martin O. Tanner, Michael A. Chu, Kang L. Wang, Marjohn Meshkinpour, Mark S. Goorsky

研究成果: Article同行評審

30 引文 斯高帕斯(Scopus)

摘要

The quality of annealed Si0.86Ge0.14 films grown on thin bond-etchback silicon on insulator (BESOI) wafers has been investigated using photoluminescence and X-ray diffraction techniques. We present evidence for the relaxation of these layers under conditions which result in higher film quality than for the same layers grown on bulk Si. The surmised mechanism leading to the reduced dislocation density is the viscous flow of the buried SiO2 layer, which allows strain in the Si0.86Ge0.14 layer to be relaxed by the introduction of dislocations primarily in the thin Si layer.

原文English
頁(從 - 到)121-125
頁數5
期刊Journal of Crystal Growth
157
發行號1-4
DOIs
出版狀態Published - 1995 十二月 2

All Science Journal Classification (ASJC) codes

  • 凝聚態物理學
  • 無機化學
  • 材料化學

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