Reliability Characteristics of Diamond-Like Carbon as Gate Insulator for Metal–Insulator–Semiconductor Application

S. L. Tyan, H. C. Tang, Z. W. Wu, T. S. Mo

研究成果: Article同行評審

摘要

Abstract: This study presents the reliability of diamond-like carbon (DLC) ultrathin films fabricated by DC magnetron sputtering as the gate dielectric layer in metal–insulator–semiconductor (MIS) devices. Stress-induced leakage current (SILC) and time-dependent dielectric breakdown (TDDB) measurements were performed to determine the reliability of the devices. The MIS device with DLC film deposited at 1100-V bias exhibited little variation of SILC under different constant voltage stress times and had a long TDDB lifetime. The results indicate excellent reliability of DLC films used as gate dielectrics. Moreover, several soft breakdown events occurred during TDDB measuring. An extended percolation model was adopted for explanation of the current versus time characteristics.

原文English
頁(從 - 到)1845-1849
頁數5
期刊Physics of the Solid State
62
發行號10
DOIs
出版狀態Published - 2020 10月 1

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學

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