TY - JOUR
T1 - Residual stress and fracture in thick tetraethylorthosilicate (TEOS) and silane-based PECVD oxide films
AU - Zhang, X.
AU - Chen, K. S.
AU - Ghodssi, R.
AU - Ayón, A. A.
AU - Spearing, S. M.
N1 - Funding Information:
This work was supported by both the US Army Research Office and DARPA under contract DAAH04-95-1-0093, Dr. R. Paur and Dr. R. Nowak, program managers, and National Science Council of Taiwan (NSC89-2212-E006-093). The cooperation of the staff of the Microsystems Technology Laboratories (MTL) and Technology Laboratory for Advanced Composites at MIT is also appreciated. The processing help of K. Broderick, P. Tierney and J. Bishop is gratefully appreciated.
PY - 2001/7/15
Y1 - 2001/7/15
N2 - This paper reports residual stress measurements and fracture analysis in thick tetraethylorthosilicate (TEOS) and silane-based plasma enhanced chemical vapor deposition (PECVD) oxide films. The measured residual stress depended strongly on thermal process parameters; dissolved hydrogen gases played an important role in governing intrinsic stress. The tendency to form cracks was found to be a strong function of film thickness and annealing temperature. Critical cracking temperature was predicted using mixed mode fracture mechanics, and the predictions provide a reasonable match to experimental observations. Finally, engineering solutions were demonstrated to overcome the problems caused by wafer bow and film cracks. The results of this study should be able to provide important insights for the design of fabrication processes for MEMS devices requiring high temperature processing of films.
AB - This paper reports residual stress measurements and fracture analysis in thick tetraethylorthosilicate (TEOS) and silane-based plasma enhanced chemical vapor deposition (PECVD) oxide films. The measured residual stress depended strongly on thermal process parameters; dissolved hydrogen gases played an important role in governing intrinsic stress. The tendency to form cracks was found to be a strong function of film thickness and annealing temperature. Critical cracking temperature was predicted using mixed mode fracture mechanics, and the predictions provide a reasonable match to experimental observations. Finally, engineering solutions were demonstrated to overcome the problems caused by wafer bow and film cracks. The results of this study should be able to provide important insights for the design of fabrication processes for MEMS devices requiring high temperature processing of films.
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U2 - 10.1016/S0924-4247(01)00610-0
DO - 10.1016/S0924-4247(01)00610-0
M3 - Article
AN - SCOPUS:0035880208
SN - 0924-4247
VL - 91
SP - 373
EP - 380
JO - Sensors and Actuators, A: Physical
JF - Sensors and Actuators, A: Physical
IS - 3
ER -