Resist trimming in high-density CF4/O2 plasmas for sub-0.1 μm device fabrication

Chian Yuh Sin, Bing Hung Chen, W. L. Loh, J. Yu, P. Yelehanka, A. See, L. Chan

研究成果: Article同行評審

25 引文 斯高帕斯(Scopus)


Through investigation of the effect of various process parameters on resist trimming, it is found that the resist trimming is a neutral-driven etching and trim rate can be enhanced by ion-assisted etching. The microloading effect is affected by process parameters in the same way as trim rate; it increases when the trim rate increases. This indicates that the microloading effect is caused by the chemical component of trimming.

頁(從 - 到)1974-1981
期刊Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
出版狀態Published - 2002 九月

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

指紋 深入研究「Resist trimming in high-density CF<sub>4</sub>/O<sub>2</sub> plasmas for sub-0.1 μm device fabrication」主題。共同形成了獨特的指紋。