Through investigation of the effect of various process parameters on resist trimming, it is found that the resist trimming is a neutral-driven etching and trim rate can be enhanced by ion-assisted etching. The microloading effect is affected by process parameters in the same way as trim rate; it increases when the trim rate increases. This indicates that the microloading effect is caused by the chemical component of trimming.
|頁（從 - 到）||1974-1981|
|期刊||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|出版狀態||Published - 2002 九月|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering