Resist trimming in high-density CF4/O2 plasmas for sub-0.1 μm device fabrication

Chian Yuh Sin, Bing Hung Chen, W. L. Loh, J. Yu, P. Yelehanka, A. See, L. Chan

研究成果: Article同行評審

25 引文 斯高帕斯(Scopus)

摘要

Through investigation of the effect of various process parameters on resist trimming, it is found that the resist trimming is a neutral-driven etching and trim rate can be enhanced by ion-assisted etching. The microloading effect is affected by process parameters in the same way as trim rate; it increases when the trim rate increases. This indicates that the microloading effect is caused by the chemical component of trimming.

原文English
頁(從 - 到)1974-1981
頁數8
期刊Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
20
發行號5
DOIs
出版狀態Published - 2002 九月

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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