Resistance memory device of La0.7Sr0.3MnO3 on Si nanotips template

C. W. Chong; M. J. Huang; H. C. Han; Y. K. Lin; J. M. Chiu; Y. F. Huang; H. J. Lin; T. W. Pi; J. G. Lin; L. C. Chen; K. H. Chen; Y. F. Chen

doi:10.1063/1.4833515

Resistance memory device of La_0.7Sr_0.3MnO₃ on Si nanotips template

C. W. Chong
, M. J. Huang
, H. C. Han
, Y. K. Lin
, J. M. Chiu
, Y. F. Huang
, H. J. Lin
, T. W. Pi
, J. G. Lin
, L. C. Chen
, K. H. Chen
, Y. F. Chen

物理學系

研究成果: Article › 同行評審

6 引文斯高帕斯（Scopus）

摘要

Modifiable resistance switching (RS) is demonstrated in devices made of La_0.7Sr_0.3MnO₃ (LSMO) on heavy-doped n-type silicon nanotips (n⁺-SiNTs) template. The high RS ratio of 900% with low switching voltage (±2 V) and read voltage (+0.1 V) prove the applicability of such devices for resistance memory cells. The RS mechanism can be modulated from interfacial charge transfer to Mott metal-insulator transition, dependent on the number of defect state at the surface of LSMO in association with the morphology of SiNTs.

原文	English
文章編號	211606
期刊	Applied Physics Letters
卷	103
發行號	21
DOIs	https://doi.org/10.1063/1.4833515
出版狀態	Published - 2013 11月 18

All Science Journal Classification (ASJC) codes

物理與天文學（雜項）

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10.1063/1.4833515

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@article{77496cbde6c14455aaa67b8a81b23588,

title = "Resistance memory device of La0.7Sr0.3MnO3 on Si nanotips template",

abstract = "Modifiable resistance switching (RS) is demonstrated in devices made of La0.7Sr0.3MnO3 (LSMO) on heavy-doped n-type silicon nanotips (n+-SiNTs) template. The high RS ratio of 900\% with low switching voltage (±2 V) and read voltage (+0.1 V) prove the applicability of such devices for resistance memory cells. The RS mechanism can be modulated from interfacial charge transfer to Mott metal-insulator transition, dependent on the number of defect state at the surface of LSMO in association with the morphology of SiNTs.",

author = "Chong, \{C. W.\} and Huang, \{M. J.\} and Han, \{H. C.\} and Lin, \{Y. K.\} and Chiu, \{J. M.\} and Huang, \{Y. F.\} and Lin, \{H. J.\} and Pi, \{T. W.\} and Lin, \{J. G.\} and Chen, \{L. C.\} and Chen, \{K. H.\} and Chen, \{Y. F.\}",

note = "Funding Information: This research was financially supported by the Ministry of Education, National Science Council of Taiwan, and the Asian Office of Aerospace Research and Development under AFOSR. Technical support was provided by the Core Facilities for Nano Science and Technology, Academia Sinica and Department of Physics, National Taiwan University. This research was performed while H. C. Han at Center for Condensed Matter Sciences, National Taiwan University, Taipei.",

year = "2013",

month = nov,

day = "18",

doi = "10.1063/1.4833515",

language = "English",

volume = "103",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Inc.",

number = "21",

}

TY - JOUR

T1 - Resistance memory device of La0.7Sr0.3MnO3 on Si nanotips template

AU - Chong, C. W.

AU - Huang, M. J.

AU - Han, H. C.

AU - Lin, Y. K.

AU - Chiu, J. M.

AU - Huang, Y. F.

AU - Lin, H. J.

AU - Pi, T. W.

AU - Lin, J. G.

AU - Chen, L. C.

AU - Chen, K. H.

AU - Chen, Y. F.

N1 - Funding Information: This research was financially supported by the Ministry of Education, National Science Council of Taiwan, and the Asian Office of Aerospace Research and Development under AFOSR. Technical support was provided by the Core Facilities for Nano Science and Technology, Academia Sinica and Department of Physics, National Taiwan University. This research was performed while H. C. Han at Center for Condensed Matter Sciences, National Taiwan University, Taipei.

PY - 2013/11/18

Y1 - 2013/11/18

N2 - Modifiable resistance switching (RS) is demonstrated in devices made of La0.7Sr0.3MnO3 (LSMO) on heavy-doped n-type silicon nanotips (n+-SiNTs) template. The high RS ratio of 900% with low switching voltage (±2 V) and read voltage (+0.1 V) prove the applicability of such devices for resistance memory cells. The RS mechanism can be modulated from interfacial charge transfer to Mott metal-insulator transition, dependent on the number of defect state at the surface of LSMO in association with the morphology of SiNTs.

AB - Modifiable resistance switching (RS) is demonstrated in devices made of La0.7Sr0.3MnO3 (LSMO) on heavy-doped n-type silicon nanotips (n+-SiNTs) template. The high RS ratio of 900% with low switching voltage (±2 V) and read voltage (+0.1 V) prove the applicability of such devices for resistance memory cells. The RS mechanism can be modulated from interfacial charge transfer to Mott metal-insulator transition, dependent on the number of defect state at the surface of LSMO in association with the morphology of SiNTs.

UR - https://www.scopus.com/pages/publications/84888417842

UR - https://www.scopus.com/pages/publications/84888417842#tab=citedBy

U2 - 10.1063/1.4833515

DO - 10.1063/1.4833515

M3 - Article

AN - SCOPUS:84888417842

SN - 0003-6951

VL - 103

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

M1 - 211606

ER -

Resistance memory device of La0.7Sr0.3MnO3 on Si nanotips template

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Resistance memory device of La_0.7Sr_0.3MnO₃ on Si nanotips template