Resistive random access memories with nanodiamond dielectric films

Chichun Lu, Yuehchieh Chu, Yon-Hua Tzeng

研究成果: Conference contribution

1 引文 斯高帕斯(Scopus)

摘要

We report the application of nanodiamond prepared by microwave plasma chemical deposition system as the dielectric film with copper as top electrodes and a tungsten counter electrode for the fabrication of resistive random access memory (RRAM). The RRAM is switched between the high-resistivity state and a low-resistivity state of nanodiamond film. The high or low resistance state can be probed by applying a low voltage across two counter electrodes on two sides of the nanodiamond film and measuring its conduction current. We observed that the Cu/Nanodiamond/W structure shows good performance with ON/OFF current ratio >105 and retention time >104 s. Nanodiamond is known to be chemically inert, good for heat dissipation, and has very low solid solubility in copper. It is, therefore, a suitable dielectric material for RRAM for harsh environments.

原文English
主出版物標題2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013
頁面225-228
頁數4
DOIs
出版狀態Published - 2013 十二月 1
事件2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013 - Beijing, China
持續時間: 2013 八月 52013 八月 8

出版系列

名字Proceedings of the IEEE Conference on Nanotechnology
ISSN(列印)1944-9399
ISSN(電子)1944-9380

Other

Other2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013
國家China
城市Beijing
期間13-08-0513-08-08

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Condensed Matter Physics

指紋 深入研究「Resistive random access memories with nanodiamond dielectric films」主題。共同形成了獨特的指紋。

引用此