Resistive switching behavior in gelatin thin films for nonvolatile memory application

研究成果: Article同行評審

81 引文 斯高帕斯(Scopus)


This paper presents the characteristics of gelatin, which can cause reproducible resistive switching and bipolar resistive switching in aluminum (Al)/gelatin (35 nm)/ITO devices. The memory devices exhibited a high ON/OFF ratio of over 106 and a long retention time of over 105 seconds. The resistive switching mechanism was investigated using the high-angle dark field transmission electron microscopy image of Al/gelatin/ITO devices in the pristine high-resistance state (HRS) and then in returning to HRS after the RESET process. The energy-dispersive X-ray spectroscopy analysis revealed the aggregation of N and Al elements and the simultaneous presence of carbon and oxygen elements in the rupture of filament paths. Furthermore, via a current-sensing atomic force microscopy, we found that conduction paths in the ON-state are distributed in a highly localized area, which is associated with a carbon-rich filamentary switching mechanism. These results support that the chelation of N binding with Al ions improves the conductivity of the low-resistance state but not the production of metal filaments.

頁(從 - 到)5413-5421
期刊ACS Applied Materials and Interfaces
出版狀態Published - 2014 4月 23

All Science Journal Classification (ASJC) codes

  • 材料科學(全部)


深入研究「Resistive switching behavior in gelatin thin films for nonvolatile memory application」主題。共同形成了獨特的指紋。