TY - JOUR
T1 - Resistive switching properties and conduction mechanisms of LaSmOx thin film by RF sputtering for RRAM applications
AU - Chu, Yu Tseng
AU - Tsai, Meng Hung
AU - Huang, Cheng Liang
N1 - Funding Information:
The work was financially sponsored by the Ministry of Science and Technology in Taiwan under the projects MOST 109-2221-E-006-139. The authors gratefully acknowledge the use of D8 Discover equipment belonging to the Instrument Center of National Cheng Kung University.
Funding Information:
The work was financially sponsored by the Ministry of Science and Technology in Taiwan under the projects MOST 109-2221-E-006-139. The authors gratefully acknowledge the use of D8 Discover equipment belonging to the Instrument Center of National Cheng Kung University.
Publisher Copyright:
© 2021 Elsevier B.V.
PY - 2021/9
Y1 - 2021/9
N2 - Polycrystalline LaSmOx (LSO) thin films were prepared by using RF sputtering and the bipolar resistive switching (BRS) properties in the Al/LSO/ITO structure were investigated. The impact of Ar/O2 ratio, film thickness and post metal annealing (PMA) condition on the resistive switching (RS) properties were also studied. The conductive mechanism is mainly dominated by the numbers of oxygen vacancies, which can be controlled through a different deposition atmosphere (Ar/O2) ratio and film thickness. In addition, the resistive switching characteristics can be improved by post metal annealing treatment due to film densification and the formation of AlOx interface layer in between the top electrode and the LaSmOx thin film. The optimized RRAM device revealed a profound improvement in the switching cycles, which can be as high as 4580.
AB - Polycrystalline LaSmOx (LSO) thin films were prepared by using RF sputtering and the bipolar resistive switching (BRS) properties in the Al/LSO/ITO structure were investigated. The impact of Ar/O2 ratio, film thickness and post metal annealing (PMA) condition on the resistive switching (RS) properties were also studied. The conductive mechanism is mainly dominated by the numbers of oxygen vacancies, which can be controlled through a different deposition atmosphere (Ar/O2) ratio and film thickness. In addition, the resistive switching characteristics can be improved by post metal annealing treatment due to film densification and the formation of AlOx interface layer in between the top electrode and the LaSmOx thin film. The optimized RRAM device revealed a profound improvement in the switching cycles, which can be as high as 4580.
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U2 - 10.1016/j.mseb.2021.115313
DO - 10.1016/j.mseb.2021.115313
M3 - Article
AN - SCOPUS:85107799853
VL - 271
JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
SN - 0921-5107
M1 - 115313
ER -