Resistive switching properties and conduction mechanisms of LaSmOx thin film by RF sputtering for RRAM applications

Yu Tseng Chu, Meng Hung Tsai, Cheng Liang Huang

研究成果: Article同行評審

摘要

Polycrystalline LaSmOx (LSO) thin films were prepared by using RF sputtering and the bipolar resistive switching (BRS) properties in the Al/LSO/ITO structure were investigated. The impact of Ar/O2 ratio, film thickness and post metal annealing (PMA) condition on the resistive switching (RS) properties were also studied. The conductive mechanism is mainly dominated by the numbers of oxygen vacancies, which can be controlled through a different deposition atmosphere (Ar/O2) ratio and film thickness. In addition, the resistive switching characteristics can be improved by post metal annealing treatment due to film densification and the formation of AlOx interface layer in between the top electrode and the LaSmOx thin film. The optimized RRAM device revealed a profound improvement in the switching cycles, which can be as high as 4580.

原文English
文章編號115313
期刊Materials Science and Engineering B: Solid-State Materials for Advanced Technology
271
DOIs
出版狀態Published - 2021 九月

All Science Journal Classification (ASJC) codes

  • 材料科學(全部)
  • 凝聚態物理學
  • 材料力學
  • 機械工業

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