Resistive switching properties of Mn-doped amorphous Nb2O5 thin films for resistive RAM application

Meng Hung Tsai, Chia Jung Shih, Che Wei Chang, Yu Tseng Chu, You Shen Wu, Cheng Liang Huang

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

In this work, based on the calculation of the band gap of amorphous Nb2O5, we proposed that the amorphization in Nb2O5 thin films could narrow the band gap. As a proof of concept, amorphous Nb2O5 based resistive random-access memory devices were fabricated. In addition to the amorphization effect, the influence of Mn dopants and temperature on the conduction mechanism of the Nb2O5-based devices were investigated. Furthermore, oxygen vacancies were demonstrated to dominate the conduction mechanism of the Mn-doped Nb2O5-based devices. The oxidation states of O, Nb, and Mn analyzed by X-ray photoelectron spectroscopy signifying that the Mn addition was conducive to the oxidation of Nb during the conduction formation process, consequently offering immense benefits for the improvement of RRAM memory performance.

原文English
文章編號107059
期刊Materials Science in Semiconductor Processing
152
DOIs
出版狀態Published - 2022 12月

All Science Journal Classification (ASJC) codes

  • 一般材料科學
  • 凝聚態物理學
  • 材料力學
  • 機械工業

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